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NTJD4401N, NVJD4401N
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
V (BR)DSS /T J
I DSS
I GSS
V GS = 0 V, I D = 250 m A
V GS = 0 V, V DS = 16 V
V DS = 0 V, V GS = ± 12 V
20
27
22
1.0
10
V
mV/ ° C
m A
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.6
0.92
1.5
V
Gate Threshold Temperature
Coefficient
V GS(TH) /T J
? 2.1
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 0.63 A
0.29
0.375
W
V GS = 2.5 V, I D = 0.40 A
0.36
0.445
Forward Transconductance
g FS
V DS = 4.0 V, I D = 0.63 A
2.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
33
46
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 20 V
13
2.8
22
5.0
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V,
I D = 0.63 A
1.3
0.1
0.2
0.4
3.0
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
td (ON)
0.083
m s
Rise Time
Turn ? Off Delay Time
Fall Time
tr
td (OFF)
tf
V GS = 4.5 V, V DD = 10 V,
I D = 0.5 A, R G = 20 W
0.227
0.786
0.506
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S =0.23 A
T J = 25 ° C
T J = 125 ° C
0.76
0.63
1.1
V
Reverse Recovery Time
t RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 0.63 A
0.410
m s
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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